PH5330E,115
MOSFET N-CH 30V 80A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc.'s PH5330E-115 is a TrenchMOS™ N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and can handle a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The low on-resistance of 5.7mOhm at 15A and 10V (Vgs) is achieved using advanced TrenchMOS technology, minimizing conduction losses. Key parameters include a gate charge (Qg) of 21 nC (max) at 5V and input capacitance (Ciss) of 2010 pF (max) at 10V (Vds). Available in the compact LFPAK56 (Power-SO8) surface mount package, this component is suitable for demanding applications in automotive and industrial sectors. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 10 V |
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