PH4830L,115
MOSFET N-CH 30V 84A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PH4830L-115 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 30V. This component offers a continuous drain current (Id) of 84A (Tc) at 25°C and a maximum power dissipation of 62.5W (Tc). It features a low on-resistance (Rds On) of 4.8mOhm at 25A and 10V, with a gate drive voltage range of 4.5V to 10V. The gate charge (Qg) is 22.9 nC @ 4.5V, and input capacitance (Ciss) is 2786 pF @ 12V. The device is available in a Surface Mount configuration within the LFPAK56, Power-SO8 (SC-100, SOT-669) package, supplied on Tape & Reel (TR). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2786 pF @ 12 V |
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