PH4025L,115
MOSFET N-CH 25V 99A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH4025L-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 99A at 25°C, with a maximum power dissipation of 46.4W (Tc). The low on-resistance of 4mOhm at 25A and 10V (Rds On) is achieved with a gate-source voltage (Vgs) of 4.5V to 10V. Key parameters include a gate charge (Qg) of 21.3 nC at 4.5V and input capacitance (Ciss) of 2601 pF at 12V. The device is housed in a surface mount LFPAK56, Power-SO8 package (SOT-669) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors demanding robust power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 99A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2601 pF @ 12 V |
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