PH3855L,115
MOSFET N-CH 55V 24A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH3855L-115 is a high-performance N-channel power MOSFET featuring a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 24A at 25°C. This component offers a maximum on-resistance (Rds On) of 36mOhm at 15A and 10V Vgs. The PH3855L-115 is housed in a compact LFPAK56, Power-SO8 package, facilitating efficient surface mounting. Key electrical parameters include a gate charge (Qg) of 11.7 nC at 5V Vgs and input capacitance (Ciss) of 765 pF at 25V Vds. With a maximum power dissipation of 50W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in the automotive and industrial sectors. The device supports drive voltages from 4.5V to 10V and has a gate-source voltage limit of ±15V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 765 pF @ 25 V |
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