PH3830L,115
MOSFET N-CH 30V 98A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH3830L-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 98A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The low on-resistance of 3.8mOhm at 25A and 10V (Vgs) is achieved through its TrenchMOS technology. Key electrical parameters include a gate charge (Qg) of 33 nC at 5V and input capacitance (Ciss) of 3190 pF at 10V. The device supports drive voltages from 5V to 10V and has a maximum gate-source voltage of ±20V, with a threshold voltage (Vgs(th)) of 2V at 1mA. Packaged in a surface-mount LFPAK56 (Power-SO8) format, this MOSFET is suitable for demanding applications in automotive and industrial power management. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3190 pF @ 10 V |
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