PH3330L,115
MOSFET N-CH 30V 100A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH3330L-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The low on-resistance (Rds On) of 3.3mOhm at 25A and 10V gate-source voltage (Vgs) facilitates minimal conduction losses. With a gate charge (Qg) of 30.5 nC at 4.5V Vgs and input capacitance (Ciss) of 4840 pF at 12V Vds, it is optimized for fast switching speeds. The device is available in a surface mount LFPAK56, Power-SO8 package (SC-100, SOT-669) and is supplied on Tape & Reel (TR). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4840 pF @ 12 V |
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