PH3075L,115
MOSFET N-CH 75V 30A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH3075L-115 is a high-performance N-Channel MOSFET designed for demanding power applications. This component features a 75V drain-source voltage and a continuous drain current capability of 30A at 25°C (Tc), with a maximum power dissipation of 75W (Tc). The PH3075L-115 offers a low on-resistance of 28mOhm maximum at 15A and 10V drive. Its LFPAK56, Power-SO8 package provides excellent thermal performance for surface mount applications. Key electrical characteristics include a gate charge of 19 nC at 5V and input capacitance of 2070 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 25 V |
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