PH1955L,115
MOSFET N-CH 55V 40A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH1955L-115 is an N-Channel Power MOSFET designed for demanding applications. This surface mount component features a 55V drain-source breakdown voltage and a continuous drain current capability of 40A at 25°C case temperature, with a maximum power dissipation of 75W (Tc). The low on-resistance is specified at 17.3mOhm maximum at 25A and 10V gate-source voltage. Key parameters include 18nC maximum gate charge at 5V Vgs and 1992pF maximum input capacitance at 25V Vds. The device operates across a temperature range of -55°C to 175°C. Packaged in an LFPAK56 (equivalent to Power-SO8/SC-100, SOT-669), this MOSFET is suitable for power management solutions in the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 17.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1992 pF @ 25 V |
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