PH1875L,115
MOSFET N-CH 75V 45.8A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. PH1875L-115 is an N-Channel MOSFET designed for high-efficiency power applications. This component features a Drain-Source Voltage (Vdss) of 75 V and a continuous Drain Current (Id) rating of 45.8 A at 25°C (Tc), with a maximum power dissipation of 62.5 W (Tc). The on-resistance (Rds On) is specified at a maximum of 16.5 mOhm at 20 A and 10 V gate drive.
The PH1875L-115 utilizes NXP's advanced MOSFET technology, offering low gate charge (Qg) of 33.4 nC maximum at 5 V and input capacitance (Ciss) of 2600 pF maximum at 25 V. It supports a wide gate-source voltage range from 4.5 V to 10 V for optimal Rds(on) and a maximum Vgs of ±15V. The device operates reliably across an extended temperature range of -55°C to 150°C (TJ).
Packaged in a surface-mount LFPAK56 (Power-SO8) form factor, this component is suitable for demanding applications in automotive, industrial, and general power management sectors. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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