PH16030L,115
MOSFET N-CH 30V 38A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PH16030L-115 is an N-Channel TrenchMOS™ MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 38A at 25°C (Tc), with a maximum power dissipation of 41.6W (Tc). It offers a low on-resistance (Rds On) of 16.9mOhm at 15A and 10V. The gate charge (Qg) is 8.2 nC at 4.5V, and input capacitance (Ciss) is a maximum of 680 pF at 12V. This device supports gate-source voltages up to ±15V and a threshold voltage (Vgs(th)) of 2V at 1mA. The PH16030L-115 is provided in a surface mount LFPAK56 (Power-SO8) package, suitable for automated assembly and common in power management, automotive, and industrial control systems. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 41.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 12 V |
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