PH1225AL,115
MOSFET N-CH 25V 100A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. PH1225AL-115 is a TrenchMOS™ N-Channel Power MOSFET designed for demanding applications. This component offers a 25V Drain-Source Voltage (Vdss) and a continuous drain current capability of 100A at 25°C (Tc). Featuring a low on-resistance of 1.2mOhm at 15A and 10V (Vgs), it minimizes conduction losses. The device exhibits a gate charge (Qg) of 105 nC (Max) at 10V and input capacitance (Ciss) of 6380 pF (Max) at 12V (Vds). The PH1225AL-115 utilizes the LFPAK56 package, also known as Power-SO8, for efficient thermal management in surface mount configurations. This MOSFET is suitable for use in automotive and industrial power switching applications requiring high current handling and low on-state resistance.
Additional Information
Series: TrenchMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-1023, 4-LFPAK |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56; Power-SO8 |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6380 pF @ 12 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
