Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

NX3020NAKT,115

Banner
productimage

NX3020NAKT,115

MOSFET N-CH 30V 180MA SC75

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The NXP USA Inc. NX3020NAKT-115 is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 180mA at 25°C. The device offers a maximum on-resistance (Rds On) of 4.5 Ohms at 100mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 0.44 nC maximum at 4.5V and input capacitance (Ciss) of 13 pF maximum at 10V. It is packaged in an SC-75 (SOT-416) and supplied on tape and reel. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for various applications including consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C180mA (Ta)
Rds On (Max) @ Id, Vgs4.5Ohm @ 100mA, 10V
FET Feature-
Power Dissipation (Max)230mW (Ta), 1.06W (Tc)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-75
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs0.44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds13 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BUK9516-75B,127

MOSFET N-CH 75V 67A TO220AB

product image
BUK9535-100A,127

MOSFET N-CH 100V 41A TO220AB

product image
PMR370XN,115

MOSFET N-CH 30V 840MA SC75