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NX3008PBKT,115

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NX3008PBKT,115

MOSFET P-CH 30V 200MA SC75

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. P-Channel MOSFET, NX3008PBKT-115, offers a 30V drain-source voltage and 200mA continuous drain current. This automotive-grade component, qualified to AEC-Q101, features a low on-resistance of 4.1 Ohms at 200mA and 4.5V Vgs. With a gate charge of 0.72 nC and input capacitance of 46 pF, it is suitable for applications requiring efficient switching. The SC-75 (SOT-416) package provides a compact surface mount solution with power dissipation capabilities of 250mW (Ta) and 770mW (Tc). Operating temperature range is -55°C to 150°C. This device is commonly utilized in automotive systems and general-purpose switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs4.1Ohm @ 200mA, 4.5V
FET Feature-
Power Dissipation (Max)250mW (Ta), 770mW (Tc)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageSC-75
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds46 pF @ 15 V
QualificationAEC-Q101

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