NX3008PBKT,115
MOSFET P-CH 30V 200MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. P-Channel MOSFET, NX3008PBKT-115, offers a 30V drain-source voltage and 200mA continuous drain current. This automotive-grade component, qualified to AEC-Q101, features a low on-resistance of 4.1 Ohms at 200mA and 4.5V Vgs. With a gate charge of 0.72 nC and input capacitance of 46 pF, it is suitable for applications requiring efficient switching. The SC-75 (SOT-416) package provides a compact surface mount solution with power dissipation capabilities of 250mW (Ta) and 770mW (Tc). Operating temperature range is -55°C to 150°C. This device is commonly utilized in automotive systems and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4.1Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta), 770mW (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 15 V |
| Qualification | AEC-Q101 |
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