NX3008PBKMB,315
MOSFET P-CH 30V 300MA DFN1006B-3Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. NX3008PBKMB-315 is a P-Channel TrenchMOS™ MOSFET designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 300mA at 25°C. The device offers a low on-resistance of 4.1 Ohms maximum at 200mA and 4.5V gate-source voltage. With a package dissipation of 360mW (Ta) and 2.7W (Tc), it is suitable for power management in portable electronics and industrial controls. Key parameters include an input capacitance (Ciss) of 46 pF maximum and a gate charge (Qg) of 0.72 nC maximum at 4.5V. The operating temperature range is -55°C to 150°C. The DFN1006B-3 package, also known as SC-101 or SOT-883, ensures a compact footprint for high-density designs.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4.1Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | DFN1006B-3 |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 15 V |
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