NX3008NBKT,115
MOSFET N-CH 30V 350MA SC75Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The NXP USA Inc. NX3008NBKT-115 is an N-channel MOSFET designed for high-efficiency switching applications. Featuring a 30V drain-source breakdown voltage and a continuous drain current of 350mA (Ta), this component excels in power management within automotive electronics and industrial control systems. Its low on-resistance of 1.4 Ohm at 350mA and 4.5V gate drive voltage, coupled with a maximum gate charge of 0.68 nC at 4.5V, ensures efficient operation and reduced power loss. Packaged in a compact SC-75 (SOT-416) surface-mount format, the NX3008NBKT-115 supports a wide operating temperature range of -55°C to 150°C. This AEC-Q101 qualified device is suitable for demanding environments, offering power dissipation capabilities of 250mW (Ta) and 770mW (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 350mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 250mW (Ta), 770mW (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | SC-75 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.68 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 15 V |
| Qualification | AEC-Q101 |