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NX3008NBKT,115

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NX3008NBKT,115

MOSFET N-CH 30V 350MA SC75

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The NXP USA Inc. NX3008NBKT-115 is an N-channel MOSFET designed for high-efficiency switching applications. Featuring a 30V drain-source breakdown voltage and a continuous drain current of 350mA (Ta), this component excels in power management within automotive electronics and industrial control systems. Its low on-resistance of 1.4 Ohm at 350mA and 4.5V gate drive voltage, coupled with a maximum gate charge of 0.68 nC at 4.5V, ensures efficient operation and reduced power loss. Packaged in a compact SC-75 (SOT-416) surface-mount format, the NX3008NBKT-115 supports a wide operating temperature range of -55°C to 150°C. This AEC-Q101 qualified device is suitable for demanding environments, offering power dissipation capabilities of 250mW (Ta) and 770mW (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C350mA (Ta)
Rds On (Max) @ Id, Vgs1.4Ohm @ 350mA, 4.5V
FET Feature-
Power Dissipation (Max)250mW (Ta), 770mW (Tc)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageSC-75
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs0.68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 15 V
QualificationAEC-Q101

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