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IRFZ44N,127

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IRFZ44N,127

MOSFET N-CH 55V 49A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number IRFZ44N-127. This TO-220AB packaged device features a 55V drain-source breakdown voltage and a continuous drain current capability of 49A (Tc). The IRFZ44N-127 offers a low on-resistance of 22mOhm maximum at 25A, 10V, and a gate charge of 62 nC maximum at 10V. With a maximum power dissipation of 110W (Tc) and an operating temperature range of -55°C to 175°C, this component is suitable for applications in power switching and motor control.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Rds On (Max) @ Id, Vgs22mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V

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