IRFR220,118
MOSFET N-CH 200V 4.8A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number IRFR220-118. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 4.8A at 25°C case temperature. With a maximum power dissipation of 42W (Tc), it utilizes surface mount technology in a DPAK (TO-252-3) package. The Rds On is specified at a maximum of 800mOhm at 2.9A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 14 nC @ 10V and input capacitance (Ciss) of 280 pF @ 25V. This component operates across a temperature range of -55°C to 150°C (TJ). It is suitable for applications in industrial and consumer electronics.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |
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