IRF640,127
MOSFET N-CH 200V 16A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ IRF640-127 is an N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 16A at 25°C (Tc). With a maximum Power Dissipation of 136W (Tc), it is suitable for high-power switching scenarios. Key electrical parameters include a low on-resistance (Rds On) of 180mOhm maximum at 8A and 10V, and a Gate Charge (Qg) of 63 nC maximum at 10V. The input capacitance (Ciss) is 1850 pF maximum at 25V. This through-hole device, packaged in a TO-220AB, operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum Gate-to-Source Voltage (Vgs) of ±20V. It finds utility in industrial, automotive, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V |
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