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IRF530N,127

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IRF530N,127

MOSFET N-CH 100V 17A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ IRF530N-127 is an N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This component offers a continuous Drain Current (Id) of 17A at 25°C and a maximum power dissipation of 79W (Tc). The Rds On is specified at a maximum of 110mOhm at 9A, 10V, with gate drive voltages up to 10V. Key parameters include Input Capacitance (Ciss) of 633pF at 25V and Gate Charge (Qg) of 40nC at 10V. The device features a ±20V maximum Gate-Source Voltage (Vgs) and a threshold voltage (Vgs(th)) of 4V at 1mA. Housed in a TO-220AB package for through-hole mounting, this MOSFET operates across a wide temperature range from -55°C to 175°C. It finds application in various industrial sectors requiring robust power switching capabilities.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs110mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)79W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds633 pF @ 25 V

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