IRF530N,127
MOSFET N-CH 100V 17A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ IRF530N-127 is an N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This component offers a continuous Drain Current (Id) of 17A at 25°C and a maximum power dissipation of 79W (Tc). The Rds On is specified at a maximum of 110mOhm at 9A, 10V, with gate drive voltages up to 10V. Key parameters include Input Capacitance (Ciss) of 633pF at 25V and Gate Charge (Qg) of 40nC at 10V. The device features a ±20V maximum Gate-Source Voltage (Vgs) and a threshold voltage (Vgs(th)) of 4V at 1mA. Housed in a TO-220AB package for through-hole mounting, this MOSFET operates across a wide temperature range from -55°C to 175°C. It finds application in various industrial sectors requiring robust power switching capabilities.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |
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