BUK9E6R1-100E,127
MOSFET N-CH 100V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9E6R1-100E-127, offers a 100V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This device features a low on-resistance of 5.9mOhm at 25A and 10V (Vgs). With a maximum power dissipation of 349W (Tc) and a junction temperature rating of 175°C, it is designed for demanding applications. Key parameters include a gate charge (Qg) of 133nC at 5V (Vgs) and an input capacitance (Ciss) of 17460pF at 25V (Vds). The MOSFET is housed in an I2PAK package with through-hole mounting and is supplied in tubes. This component is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17460 pF @ 25 V |
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