BUK9E4R9-60E,127
MOSFET N-CH 60V 100A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9E4R9-60E-127 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 234W (Tc). The low on-resistance of 4.5mOhm at 25A and 10V (Vgs) minimizes conduction losses. It offers a gate charge (Qg) of 65 nC at 5V and input capacitance (Ciss) of 9710 pF at 25V. The BUK9E4R9-60E-127 is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 234W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9710 pF @ 25 V |
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