BUK9E4R4-80E,127
MOSFET N-CH 80V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ BUK9E4R4-80E-127 is an N-channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) capability of 120 A at 25°C, with a maximum power dissipation of 349 W at the same temperature. The on-resistance (Rds On) is specified at a maximum of 4.2 mOhm at 25 A and 10 V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 123 nC at 5 V and an input capacitance (Ciss) of 17130 pF at 25 V. The MOSFET operates across a temperature range of -55°C to 175°C. It is packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA) for through-hole mounting. This device is commonly utilized in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17130 pF @ 25 V |
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