BUK9E4R4-40B,127
MOSFET N-CH 40V 75A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK9E4R4-40B-127, features a 40V drain-source voltage and 75A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 4mOhm maximum at 25A, 10V. Designed for through-hole mounting in an I2PAK package, it supports a maximum power dissipation of 254W (Tc). Key electrical characteristics include a gate charge of 64nC maximum at 5V and input capacitance of 7124pF maximum at 25V. Operating temperature ranges from -55°C to 175°C. The device is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 254W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7124 pF @ 25 V |
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