BUK9E3R2-40E,127
MOSFET N-CH 40V 100A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ series N-Channel MOSFET, part number BUK9E3R2-40E-127. This component offers a Drain to Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 100 A at 25°C. Featuring a low on-resistance (Rds On) of 2.8 mOhm maximum at 25 A and 10 V, this device is designed for efficient power switching. The gate charge (Qg) is 69.5 nC maximum at 5 V, with input capacitance (Ciss) at 9150 pF maximum at 25 V. Power dissipation reaches 234 W at the case temperature. The BUK9E3R2-40E-127 is housed in an I2PAK package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 234W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 69.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9150 pF @ 25 V |
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