BUK9E3R2-40B,127
MOSFET N-CH 40V 100A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9E3R2-40B-127, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 100A at 25°C. This device features a low on-resistance of 2.8mOhm maximum at 25A and 10V Vgs. Designed with a high power dissipation rating of 300W (Tc), it is suitable for demanding applications. The MOSFET utilizes a TrenchMOS technology and is presented in an I2PAK (TO-262-3 Long Leads, TO-262AA) through-hole package. Key parameters include a gate charge (Qg) of 94 nC maximum at 5V Vgs and input capacitance (Ciss) of 10502 pF maximum at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component finds application in power switching, motor control, and power supply designs across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10502 pF @ 25 V |
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