BUK9E2R8-60E,127
MOSFET N-CH 60V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ BUK9E2R8-60E-127 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 120 A at 25°C, with a maximum power dissipation of 349 W at the same temperature. The low on-resistance of 2.6 mOhm is achieved at 25 A and 10 V Vgs.
Key parameters include a Gate Charge (Qg) of 120 nC at 5 V and an input capacitance (Ciss) of 17450 pF at 25 V. The MOSFET operates with a gate-source voltage range of ±10 V, and its threshold voltage (Vgs(th)) is a maximum of 2.1 V at 1 mA. This device is housed in an I2PAK package, suitable for through-hole mounting. It is engineered for reliable operation across a wide temperature range from -55°C to 175°C (TJ). Applications for this MOSFET include industrial power supplies, motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17450 pF @ 25 V |
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