BUK9E2R3-40E,127
MOSFET N-CH 40V 120A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK9E2R3-40E-127, offers a 40V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This component features a low on-resistance of 2.2mOhm maximum at 25A and 10V. The BUK9E2R3-40E-127 is housed in an I2PAK package with through-hole mounting and provides a maximum power dissipation of 293W (Tc). Its typical applications span automotive, industrial, and power supply sectors. The device operates within a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 5V to 10V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 87.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13160 pF @ 25 V |
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