BUK9E1R9-40E,127
MOSFET N-CH 40V I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. BUK9E1R9-40E-127 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) capability of 120 A at 25°C (Tj). The BUK9E1R9-40E-127 utilizes advanced MOSFET technology, offering efficient power switching. Its robust construction, housed in an I2PAK (TO-262-3 Long Leads, I2PAK, TO-262AA) package, supports through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly employed in industrial power supplies, automotive systems, and motor control applications where reliability and high current handling are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tj) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | I2PAK |
| Drain to Source Voltage (Vdss) | 40 V |
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