BUK9E04-30B,127
MOSFET N-CH 30V 75A I2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9E04-30B-127 is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Tc). The BUK9E04-30B-127 offers a low on-resistance (Rds On) of 3mOhm at 25A and 10V Vgs. With a maximum power dissipation of 254W (Tc), it is suitable for power management solutions in automotive, industrial, and server applications. The device is housed in an I2PAK package with through-hole mounting, ensuring robust thermal performance and ease of integration. Key electrical characteristics include a gate charge (Qg) of 56 nC at 5V and an input capacitance (Ciss) of 6526 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 254W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6526 pF @ 25 V |
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