BUK9907-55ATE,127
MOSFET N-CH 55V 75A TO220-5Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ BUK9907-55ATE-127 is a high-performance N-channel MOSFET designed for demanding applications. This component features a low on-resistance of 6.2mOhm at 50A and 10V Vgs, coupled with a continuous drain current capability of 75A at 25°C. The 55V drain-source breakdown voltage and a maximum power dissipation of 272W (Tc) make it suitable for power switching and motor control applications in the automotive and industrial sectors. Key specifications include a gate charge of 108 nC at 5V, input capacitance of 5836 pF at 25V, and a wide operating temperature range of -55°C to 175°C. This device is packaged in a TO-220-5 through-hole configuration and incorporates a temperature sensing diode for enhanced thermal management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 50A, 10V |
| FET Feature | Temperature Sensing Diode |
| Power Dissipation (Max) | 272W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5836 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
