BUK9880-55A,115
MOSFET N-CH 55V 7A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ BUK9880-55A-115 is an N-channel Power MOSFET designed for high-performance applications. This AEC-Q101 qualified component features a 55V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C (Tc), with a maximum power dissipation of 8W (Tc). The BUK9880-55A-115 offers a low on-resistance of 73mOhm at 8A and 10V gate drive. Its gate charge is specified at 11nC maximum at 5V, and it operates across a wide temperature range of -55°C to 150°C. The device is housed in a surface-mount SC-73 (TO-261-4) package and is supplied on tape and reel. This component is suitable for automotive applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 584 pF @ 25 V |
| Qualification | AEC-Q101 |
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