BUK9832-55A,115
MOSFET N-CH 55V 12A SOT223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK9832-55A-115. This automotive-grade device offers a 55V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C. The BUK9832-55A-115 features a low on-resistance of 29mOhm maximum at 8A and 10V gate-source voltage, with a threshold voltage of 2V at 1mA. Designed for surface mounting in the TO-261-4 (SC-73) package, it supports a maximum power dissipation of 8W. The device is AEC-Q101 qualified and operates across a temperature range of -55°C to 150°C. Typical applications include automotive power management and general-purpose switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1594 pF @ 25 V |
| Qualification | AEC-Q101 |
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