BUK98180-100A,115
MOSFET N-CH 100V 4.6A SOT-223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK98180-100A-115, is a surface-mount device engineered for robust performance. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 4.6A at 25°C. The NXP BUK98180-100A-115 exhibits a maximum On-Resistance (Rds On) of 173mOhm at 5A and 10V gate drive. It is qualified to AEC-Q101 standards and designed for automotive applications. The device is housed in a TO-261-4, TO-261AA (SC-73) package and supports a maximum power dissipation of 8W. Key electrical parameters include an input capacitance (Ciss) of 619pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2V at 1mA. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 173mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 619 pF @ 25 V |
| Qualification | AEC-Q101 |
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