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BUK98150-55A,135

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BUK98150-55A,135

MOSFET N-CH 55V 5.5A SOT-223

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK98150-55A-135. This AEC-Q101 qualified component features a 55V drain-source voltage and 5.5A continuous drain current at 25°C. With a maximum Rds(on) of 137mOhm at 5A and 10Vgs, it offers efficient switching. The device operates within a temperature range of -55°C to 150°C and is housed in a TO-261-4 (SC-73) surface mount package. Key parameters include 320pF input capacitance at 25Vds and 5.3nC gate charge at 5Vgs, with a gate-source voltage tolerance up to ±15V and a threshold voltage of 2V at 1mA. This robust MOSFET is suitable for automotive applications.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Rds On (Max) @ Id, Vgs137mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)8W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageSC-73
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs5.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 25 V
QualificationAEC-Q101

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