BUK98150-55,135
MOSFET N-CH 55V 5.5A SOT-223Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number BUK98150-55-135. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.5A at 25°C. The BUK98150-55-135 offers a maximum on-resistance (Rds On) of 150mOhm at 5A and 5V Vgs. It is packaged in a TO-261-4, TO-261AA (SC-73) surface mount configuration, supplied on tape and reel. Key parameters include a 330pF maximum input capacitance (Ciss) at 25V, a threshold voltage (Vgs(th)) of 2V at 1mA, and a maximum gate-source voltage (Vgs(Max)) of ±10V. The power dissipation is rated at 8.3W at 25°C. This component is suitable for applications in automotive and industrial sectors. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | SC-73 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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