BUK968R3-40E,118
MOSFET N-CH 40V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK968R3-40E-118 is a 40V N-channel power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 6.4mOhm at 20A and 10V Vgs, facilitating minimal conduction losses. With a continuous drain current capability of 75A (Tc) and a maximum power dissipation of 96W (Tc), it is well-suited for demanding power management tasks. The device utilizes a TO-263-3, D2PAK package for efficient heat dissipation via surface mounting. Key electrical parameters include a gate charge of 20.9 nC at 5V Vgs and input capacitance of 2600 pF at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial, and consumer electronics power supply units and motor control circuits.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |