BUK962R1-40E,118
MOSFET N-CH 40V 120A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK962R1-40E-118. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C case temperature, with a maximum power dissipation of 293W (Tc). The low on-resistance is specified as 1.8mOhm maximum at 25A drain current and 10V gate-source voltage. It offers a typical gate charge of 87.8 nC at 5V Vgs and input capacitance of 13160 pF at 25V Vds. Designed for surface mounting, it is supplied in a TO-263-3, D2PAK package, available on Tape & Reel. This MOSFET is suitable for applications in automotive and industrial power management. Operating junction temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 87.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13160 pF @ 25 V |
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