BUK9620-100A,118
MOSFET N-CH 100V 63A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK9620-100A-118 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 63 A at 25°C with a thermal case (Tc). The BUK9620-100A-118 offers a low on-resistance (Rds On) of 19 mOhm maximum at 25 A and 10 V gate-to-source voltage (Vgs). Its robust design supports a maximum power dissipation of 200 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). With a gate drive voltage range from 4.5 V to 10 V and a maximum Vgs of ±10 V, this MOSFET is suitable for power switching applications in automotive, industrial, and power supply sectors. The component is provided in a TO-263-3, D2PAK package, supplied on tape and reel for efficient surface mount assembly.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6385 pF @ 25 V |
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