BUK961R7-40E,118
MOSFET N-CH 40V 120A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK961R7-40E-118 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 40V Drain-Source Voltage (Vdss) and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 324W at the same temperature. The ultra-low on-resistance of 1.5mOhm at 25A and 10V drive ensures excellent conduction efficiency.
Key specifications include a gate charge of 105.4 nC at 5V and input capacitance of 15010 pF at 25V. The BUK961R7-40E-118 is housed in a TO-263-3, D2PAK surface mount package, ideal for high-density board layouts. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for automotive, industrial motor control, and power supply applications where robust performance and thermal management are critical. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 324W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 105.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15010 pF @ 25 V |
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