BUK961R4-30E,118
MOSFET N-CH 30V 120A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET providing 30V Vds and 120A continuous drain current at 25°C. The BUK961R4-30E-118 features a low Rds(on) of 1.4mOhm at 25A, 5V, enabling high efficiency in power conversion applications. This device supports a gate drive range of 5V to 10V, with a maximum gate charge of 113 nC at 5V and input capacitance of 16150 pF at 25V. Its robust design includes a maximum power dissipation of 357W at 25°C (Tc) and an operating temperature range of -55°C to 175°C (TJ). Supplied in a D2PAK Surface Mount package, this MOSFET is suitable for demanding applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16150 pF @ 25 V |
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