BUK9618-55A,118
MOSFET N-CH 55V 61A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number BUK9618-55A-118, is designed for high-efficiency power switching applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 61A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The device offers a low on-resistance (Rds On) of 16mOhm at 25A and 10V, minimizing conduction losses. Key parameters include a maximum gate charge (Qg) of 34 nC at 5V and input capacitance (Ciss) of 2210 pF at 25V. The BUK9618-55A-118 is housed in a D2PAK (TO-263-3, D2PAK) surface-mount package, suitable for automated assembly processes and offering excellent thermal performance. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems where robust power handling and efficiency are critical.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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