BUK9616-55A,118
MOSFET N-CH 55V 66A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ BUK9616-55A-118 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 66A at 25°C (Tc). With a maximum power dissipation of 138W (Tc), it is suitable for power management solutions. The BUK9616-55A-118 offers a low on-resistance of 15mOhm maximum at 25A and 10V Vgs. It is packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) for surface mounting and is supplied on tape and reel. This MOSFET is qualified to AEC-Q101 standards, indicating its suitability for the automotive industry. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 138W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3085 pF @ 25 V |
| Qualification | AEC-Q101 |
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