BUK96150-55A,118
MOSFET N-CH 55V 13A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ BUK96150-55A-118 is an N-channel MOSFET with a drain-source voltage (Vdss) of 55V. This device offers a continuous drain current (Id) of 13A at 25°C and a maximum power dissipation of 53W (Tc). The Rds On is specified at 137mOhm maximum at 13A and 10V Vgs. Featuring a low threshold voltage (Vgs(th)) of 2V at 1mA and a gate-source voltage range of ±10V, this MOSFET is designed for efficient switching applications. Input capacitance (Ciss) is 339 pF at 25V. The component is housed in a TO-263-3, D2PAK package suitable for surface mounting and is supplied on tape and reel. This device finds application in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 137mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 339 pF @ 25 V |
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