BUK9611-55A,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc.'s TrenchMOS™ BUK9611-55A-118 is an N-Channel power MOSFET designed for high-efficiency switching applications. This device features a 55 V drain-source voltage rating and a continuous drain current capability of 75 A at 25°C (Tc), with a maximum power dissipation of 166 W (Tc). The low on-resistance of 10 mOhm at 25 A and 10 V gate-source voltage, coupled with a 4.5V gate drive capability, ensures minimal conduction losses. With a Ciss of 4230 pF at 25 V, it offers excellent switching characteristics. The BUK9611-55A-118 is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, suitable for demanding thermal management. Typical applications include automotive power systems, industrial motor control, and power supply units. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4230 pF @ 25 V |
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