BUK9610-55A,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. BUK9610-55A-118 is an N-Channel TrenchMOS™ Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 55V and offers a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 200W (Tc). Its low on-resistance (Rds On) is specified at 9mOhm at 25A and 10V, facilitating efficient power transfer. The MOSFET is housed in a TO-263-3, D2PAK package for surface mounting and operates across a wide temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 68 nC at 5V and input capacitance (Ciss) of 4307 pF at 25V. This component is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4307 pF @ 25 V |
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