BUK9607-30B,118
MOSFET N-CH 30V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. BUK9607-30B-118 is a high-performance N-channel Power MOSFET designed for demanding applications. This component offers a 30V drain-source voltage (VDS) and a continuous drain current (ID) of 75A, housed in a robust D2PAK package suitable for efficient thermal management. Its advanced trench MOSFET technology ensures low on-state resistance (RDS(on)) and fast switching speeds, critical for power conversion, motor control, and automotive systems. The BUK9607-30B-118 is engineered for reliability and superior electrical characteristics, making it an ideal choice for power management solutions in automotive, industrial, and consumer electronics sectors where robust performance is paramount.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |