BUK9606-55A,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. BUK9606-55A-118 is a high-performance N-channel TrenchMOS logic-level MOSFET designed for demanding applications. This component offers a 55V drain-source voltage and a continuous drain current capability of 75A, packaged in a D2PAK surface-mount configuration for efficient thermal management. Its low on-state resistance, typically specified by the R_DS(on) parameter, ensures minimal power dissipation and high efficiency in switching applications. The logic-level gate drive simplifies interfacing with lower voltage microcontrollers and gate driver ICs. This MOSFET is suitable for power switching, motor control, and power management circuits across various industries including automotive, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
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