BUK954R4-80E,127
MOSFET N-CH 80V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the BUK954R4-80E-127, an N-Channel TrenchMOS™ MOSFET designed for robust power switching applications. This device features a 80V drain-to-source breakdown voltage and supports a continuous drain current of 120A at 25°C (Tc), with a maximum power dissipation of 349W (Tc). The low on-resistance of 4.2mOhm is achieved at 25A and 10V (Vgs), with specified drive voltages ranging from 5V to 10V. Key parameters include a maximum gate charge (Qg) of 123 nC at 5V (Vgs) and a maximum input capacitance (Ciss) of 17130 pF at 25V (Vds). The BUK954R4-80E-127 is housed in a standard TO-220AB package for through-hole mounting, operating across an extended temperature range of -55°C to 175°C. This component is suitable for use in automotive, industrial power, and high-power switching systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 349W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17130 pF @ 25 V |
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