BUK953R5-60E,127
MOSFET N-CH 60V 120A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ series N-channel power MOSFET, part number BUK953R5-60E-127. This AEC-Q101 qualified device features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 120 A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 3.4 mOhm at 25 A and 10 V. Key parameters include an input capacitance (Ciss) of 13490 pF at 25 V and a gate charge (Qg) of 95 nC at 5 V. With a maximum power dissipation of 293 W, it is housed in a TO-220AB package for through-hole mounting. This component is suitable for automotive applications and operates across a wide temperature range from -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 293W (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Supplier Device Package | TO-220AB |
| Grade | Automotive |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13490 pF @ 25 V |
| Qualification | AEC-Q101 |
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