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BUK953R2-40E,127

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BUK953R2-40E,127

MOSFET N-CH 40V 100A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. BUK953R2-40E-127 is a TrenchMOS™ N-Channel power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 234W (Tc). The Rds On is specified at a maximum of 2.8mOhm when drawing 25A with a 10V gate-source voltage. Key parameters include a gate charge (Qg) of 69.5 nC at 5V and input capacitance (Ciss) of 9150 pF at 25V. This through-hole device utilizes the TO-220AB package. It operates across a wide temperature range from -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial, and power supply applications requiring robust switching performance.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)234W (Tc)
Vgs(th) (Max) @ Id2.1V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs69.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds9150 pF @ 25 V

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